Engineering & Materials Science
Junction gate field effect transistors
85%
Electric potential
84%
Diodes
76%
Bipolar transistors
76%
Field effect transistors
67%
Avalanche photodiodes
62%
Fabrication
57%
Molecular beam epitaxy
55%
Schottky barrier diodes
52%
Temperature
49%
Current density
46%
Thyristors
45%
Ohmic contacts
39%
Silicon carbide
38%
Electric breakdown
37%
Leakage currents
34%
Annealing
30%
Doping (additives)
27%
Quantum efficiency
27%
Ion implantation
27%
Microwaves
26%
Switches
25%
Phonons
25%
Avalanche diodes
23%
Power generation
23%
Contact resistance
22%
Electric fields
21%
Positive temperature coefficient
21%
Heterojunctions
20%
Photodetectors
20%
Transistors
20%
Photons
19%
Wavelength
18%
Electrons
18%
Epilayers
18%
Cavity resonators
17%
Oxides
17%
Semiconductor materials
16%
Substrates
14%
Conduction bands
14%
Deep level transient spectroscopy
14%
Nitrides
13%
Electron traps
13%
Semiconductor quantum wells
13%
Hole traps
13%
Transconductance
13%
Electron mobility
12%
Epitaxial growth
12%
Surface states
12%
Chemical Compounds
Voltage
100%
Current Gain
87%
Field Effect
54%
Schottky Barrier
52%
Breakdown Voltage
48%
Leakage Current
33%
Current Density
31%
Monte Carlo Method
29%
Microwave
26%
Avalanche Breakdown
25%
Ambient Reaction Temperature
25%
Annealing
23%
Optical Phonon
22%
Simulation
22%
Application
20%
Molecular Beam Epitaxy
20%
Silicon Carbide
20%
Electric Field
19%
Contact Resistance
17%
Transconductance
16%
Wavelength
16%
Etching
15%
Time
14%
Epitaxial Growth
14%
Epitaxial Film
13%
Energy
13%
Ion Implantation
12%
Implanted Ion
12%
Electron Trap
11%
Hole Trap
11%
Nitride
11%
Drain Current
11%
Electron Particle
10%
Photon
10%
Semiconductor
10%
Band Gap
10%
Surface State
10%
Deep Trap
10%
Figure of Merit
9%
Drop
9%
Valence Band
9%
Oxide
9%
Electron Mobility
9%
Compound Mobility
9%
Amorphization
9%
Resonance
9%
Resistance
9%
Impact Ionization
8%
Chemical Passivation
8%
Physics & Astronomy
JFET
51%
avalanches
35%
high voltages
35%
photodiodes
32%
diodes
28%
Schottky diodes
28%
bipolar transistors
28%
thyristors
25%
inverters
24%
traps
23%
junction transistors
23%
characterization
23%
fabrication
23%
avalanche diodes
21%
electrical faults
21%
implantation
21%
electric potential
21%
silicon carbides
20%
high current
20%
field effect transistors
18%
direct current
18%
simulation
17%
microwaves
16%
leakage
16%
room temperature
14%
annealing
14%
spectroscopy
14%
etching
14%
current density
13%
ions
12%
reactors
11%
switches
11%
performance
11%
multiplication
11%
transferred electron devices
10%
electrons
10%
mesas
9%
electron cyclotron resonance
9%
ion implantation
9%
temperature
9%
quantum efficiency
9%
defects
9%
molecular beam epitaxy
9%
profiles
8%
Gunn effect
8%
nitrides
8%
electric contacts
8%
metals
8%
contact resistance
8%
photons
8%
