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Jian Zhao

Calculated based on number of publications stored in Pure and citations from Scopus
1987 …2018

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  • 2018

    Glide of basal plane dislocations during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor

    Feng, G., Qian, W. N., Sun, Y. Q., Chen, Z. & Zhao, J. H., 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 80-83 4 p. (Materials Science Forum; vol. 924 MSF).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Growth of 150 mm 4H-SiC epitaxial layer by a hot-wall reactor

    Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Li, Y. Y., Li, K. X. & Zhao, J. H., 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 76-79 4 p. (Materials Science Forum; vol. 924 MSF).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations
  • 2016

    Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor

    Feng, G., Sun, Y. Q., Qian, W. N., Lv, L. P., Zhao, J. H., Tsai, D., Raghunathan, M. & Fei, Y., 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 189-192 4 p. (Materials Science Forum; vol. 858).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations

  • Formation and reduction of large growth pits on 100 mm 4° 4H-SiC

    Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Lv, L. P., Li, Y. Y., Li, K. X. & Zhao, J. H., 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 193-196 4 p. (Materials Science Forum; vol. 858).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations
  • 2012

    Design of an integrated SiC JFET power switch and flyback diode

    Radhakrishnan, R. & Zhao, J. H., 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1041-1044 4 p. (Materials Science Forum; vol. 717-720).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Fabrication and characterization of 4H-SiC 6kV gate turn-off thyristor

    Lin, L. & Zhao, J. H., 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1163-1166 4 p. (Materials Science Forum; vol. 717-720).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    7 Scopus citations

  • Influence of anode layout on the performance of SiC JBS diodes

    Radhakrishnan, R. & Zhao, J. H., 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 937-940 4 p. (Materials Science Forum; vol. 717-720).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    5 Scopus citations

  • SiC solid-state disconnect for high power system applications

    Li, X., Alexandrov, P., Fursin, L., Dries, C. & Zhao, J. H., 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1249-1252 4 p. (Materials Science Forum; vol. 717-720).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations
  • 2011

    High voltage 4H-SiC BJTs with deep mesa edge termination

    Zhang, J., Zhao, J. H., Wang, X., Li, X., Fursin, L., Alexandrov, P., Gagliardi, M. A., Lange, M. & Dries, C., 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 710-713 4 p. (Materials Science Forum; vol. 679-680).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Optically triggered power switch based on 4H-SiC vertical JFET

    Alexandrov, P., Li, X. & Zhao, J. H., 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 625-628 4 p. (Materials Science Forum; vol. 679-680).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Proton irradiation of 4H-SiC ultraviolet single photon avalanche diodes

    Gaskill, D. K., Hu, J., Xin, X., Zhao, J. H., VanMil, B. L., Myers-Ward, R. L. & Eddy, C. R., 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 551-554 4 p. (Materials Science Forum; vol. 679-680).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Solid-state disconnects based on SiC power JFETs

    Alexandrov, P., Li, X., Fursin, L., Dries, C., Zhao, J. & Burke, T., 2011, 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011. 6043095. (2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations
  • 2010

    Combined Raman scattering and TEM studies on polytype transformation in SiC from heavily nitrogen doping

    Chen, J., Lien, S. C., Feng, Z. C., Kuan, C. H., Horng, R. H., Zhao, J. H. & Lu, W., 2010, XXII International Conference on Raman Spectroscopy, ICORS 2010. p. 1139-1140 2 p. (AIP Conference Proceedings; vol. 1267).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2009

    1600 V, 5, 1mΩ·cm24H-SiC BJT with a high current gain of β=70

    Zhang, J., Alexandrov, P. & Zhao, J. H., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1155-1158 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    13 Scopus citations

  • 4H-SiC bipolar junction transistors with graded base doping profile

    Zhang, J., Fursin, L., Li, X., Wang, X., Zhao, J. H., Vanmil, B. L., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. Trans Tech Publications Ltd, p. 829-832 4 p. (Materials Science Forum; vol. 615 617).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    9 Scopus citations

  • 4H-SiC LJFET-based power IC using depletion load

    Su, M., Sheng, K., Zhao, J. H. & Li, X., 2009, 2009 International Semiconductor Device Research Symposium, ISDRS '09. 5378114. (2009 International Semiconductor Device Research Symposium, ISDRS '09).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 4H-SiC single photon avalanche diode for 280nm UV applications

    Hu, J., Xin, X., Alexandrov, P., Zhao, J. H., Van Mil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C. R., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1203-1206 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Scopus citations

  • 5 kV, 9.5 A SiC JBS diodes with non-uniform guard ring edge termination for high power switching application

    Hu, J., Li, L. X., Alexandrov, P., Wang, X. & Zhao, J. H., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 947-950 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    11 Scopus citations

  • A vertical SiC JFET with a monolithically integrated JBS diode

    Sheng, K., Radhakrishnan, R., Zhang, Y. & Zhao, J. H., 2009, ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's. p. 255-258 4 p. 5158050. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    4 Scopus citations

  • Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

    Sheng, K., Zhang, Y., Yu, L., Su, M. & Zhao, J. H., 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09. p. 302-306 5 p. 5157403. (2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Development of high temperature lateral HV and LV JFETs in 4H-SiC

    Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P. & Fursin, L., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1091-1094 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Material properties of GaN films grown on SiC/SOI substrate

    Feng, Z. C., Tran, C., Ferguson, I. T. & Zhao, J. H., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1313-1316 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Occurrence of polytype transformation during nitrogen doping of SiC bulk wafer

    Chen, J., Lien, S. C., Shin, Y. C., Feng, Z. C., Kuan, C. H., Zhao, J. H. & Lu, W. J., 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 39-42 4 p. (Materials Science Forum; vol. 600-603).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    9 Scopus citations
  • 2008

    High frequency switching of SiC high voltage LJFET

    Sheng, K., Zhang, Y., Su, M., Yu, L. & Zhao, J. H., 2008, ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. p. 229-232 4 p. 4538940. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations
  • 2007

    Demonstration of the first power IC on 4H-SiC

    Zhao, J. H., Zhang, Y., Su, M., Sheng, K., Alexandrov, P. & Fursin, L., 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422416. (2007 International Semiconductor Device Research Symposium, ISDRS).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Scopus citations

  • High performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

    Xin, X., Hu, J., Alexandov, P., Zhao, J. H., VanMil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C., 2007, Advanced Photon Counting Techniques II. 677114. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6771).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    5 Scopus citations

  • Modeling and design of a monolithically integrated power converter on SiC

    Yu, L. C., Sheng, K. & Zhao, J. H., 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422381. (2007 International Semiconductor Device Research Symposium, ISDRS).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations
  • 2006

    10kV, 87mΩcm2 normally-off 4H-SiC vertical junction field-effect transistors

    Li, Y., Alexandrov, P., Zhang, J., Li, L. X. & Zhao, J. H., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1187-1190 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    5 Scopus citations

  • 1836 V, 4.7 mΩ-cm2 high power 4H-SiC bipolar junction transistor

    Zhang, J., Wu, J., Alexandrov, P., Burke, T., Sheng, K. & Zhao, J. H., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1417-1420 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    14 Scopus citations

  • Demonstration of high-voltage 4H-SiC bipolar RF power limiter

    Su, M., Xin, X., Li, L. X. & Zhao, J. H., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1371-1374 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    4 Scopus citations

  • Design, fabrication and application of 4H-SiC trenched-and-Lmplanted vertical JFETs

    Zhao, J. H., Alexandrov, P., Li, Y., Li, L., Sheng, K. & Lebron-Velilla, R., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1191-1194 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    11 Scopus citations

  • Development of ultra high sensitivity UV silicon carbide detectors

    Yan, F., Xin, X., Alexandrov, P., Stahle, C. M., Guan, B. & Zhao, J. H., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1461-1464 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    7 Scopus citations
  • 2005

    Characterization and application of SiC TI-VJFETs

    Sheng, K., Lee, J. H., Alexandrov, P. & Zhao, J. H., 2005, 2005 International Semiconductor Device Research Symposium. p. 296-297 2 p. 1596102. (2005 International Semiconductor Device Research Symposium; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Characterization of normally-off SiC vertical JFET devices and inverter circuits

    Lai, J. S., Yu, H., Zhang, J., Alexandrov, P., Li, Y., Zhao, J. H., Sheng, K. & Hefner, A., 2005, Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting. p. 404-409 6 p. 1518340. (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); vol. 1).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    18 Scopus citations

  • Effect of graded base doping on the gain of SiC BJT

    Zhao, J. H., Zhang, J., Li, X. & Sheng, K., 2005, 2005 International Semiconductor Device Research Symposium. p. 398-399 2 p. 1596154. (2005 International Semiconductor Device Research Symposium; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations

  • High temperature characterization of SiC BJTs for power switching applications

    Sheng, K., Yu, L. C., Zhang, J. & Zhao, J. H., 2005, 2005 International Semiconductor Device Research Symposium. p. 168-169 2 p. 1596035. (2005 International Semiconductor Device Research Symposium; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Scopus citations
  • 2004

    A high performance 4H-SiC normally-off VJFET

    Zhao, J. H., Tone, K., Sheng, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. & Burke, T., 2004, Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference. Wang, Z. (ed.). p. 342-346 5 p. (Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference; vol. 1).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2003

    Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

    Luo, Y., Zhang, J., Alexandrov, P., Fursin, L. & Zhao, J. H., 2003, 61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 25 1 p. 1226855. (Device Research Conference - Conference Digest, DRC; vol. 2003-January).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations
  • 2002

    4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

    Alexandrov, P., Wright, B., Pan, M., Weiner, M., Fursin, L. & Zhao, J. H., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1177-1180 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    2 Scopus citations

  • All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A

    Luo, Y., Fursin, L., Zhao, J. H., Alexandrov, P., Wright, B. & Weiner, M., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1325-1328 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Scopus citations

  • A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

    Li, X., Fursin, L., Zhao, J. H., Alexandrov, P., Pan, M., Weiner, M., Burke, T. & Khalil, G., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1345-1348 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • A novel high-voltage normally-off 4H-SiC vertical JFET

    Zhao, J. H., Li, X., Tone, K., Alexandrov, P., Pan, M. & Weiner, M., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1223-1226 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    17 Scopus citations

  • A novel technology for the formation of a very small bevel angle for edge termination

    Yan, F., Qin, C., Zhao, J. H. & Weiner, M., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1305-1308 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    20 Scopus citations

  • Demonstration of 4H-SiC avalanche photodiode linear array

    Yan, F., Qin, C., Zhao, J. H., Bush, M. & Olsen, G. H., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1431-1434 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • On the temperature coefficient of 4H-SiC npn transistor current gain

    Li, X., Luo, Y., Zhao, J. H., Alexandrov, P., Pan, M. & Weiner, M., 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1333-1336 4 p. (Materials Science Forum; vol. 389-393).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations
  • 2001

    4H-SiC BJT and Darlington switch for power inverter applications

    Li, X., Luo, Y., Fursin, L., Zhao, J. H., Pan, M., Alexandrov, P. & Weiner, M., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 9-12 4 p. 984426. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    5 Scopus citations

  • A novel high power bipolar transistor in 4H-SiC

    Zhao, J. H., Li, X., Fursin, L., Alexandrov, P., Pan, M., Weiner, M., Burke, T. & Khalil, G., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 231-234 4 p. 984483. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2° positive bevel

    Yan, F., Qin, C. & Zhao, J. H., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 216-219 4 p. 984479. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode

    Alexandrov, P., Wright, W., Pan, M., Weiner, M., Jiao, L. & Zhao, J. H., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 13-16 4 p. 984427. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    4 Scopus citations

  • Design and fabrication of 4H-SiC APD linear arrays

    Yan, F., Qin, C., Zhao, J. H., Bush, N. & Olsen, G., 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 17-20 4 p. 984428. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Scopus citations