High-mobility ferroelectrics for polarization-controlled devices from first principles

Project Details

Description

High-mobility ferroelectrics for polarization-controlled devices from first principlesA non-volatile transistor holds promise for revolutionizing electronics and sensing applications. One potential materials platform that can be used to develop this device invo'lves ferroelectrics incorporated into all-oxide heterostructures, with the ferroelectric imprinting non-volatile states in a transis'tor. One advantage of these materials systems is that conducting perovskite oxides are structurally and chemically compatible with s'everal ferroelectric oxides that have superior performance, such as those in the PbZrxTi1-xO3 family. The challenge is to design and' demonstrate heterostructures with large on-off ratios at room temperature. The choice of materials and termination can be guided by' first-principles calculations that reveal the structuraland electronic differences between the two polarization states, with parti''cular attention to the charge distribution near the interface and the mobility of the interface charges. In this project, a tightly-''integrated experimental-theoretical collaboration with the group of Charles Ahn at Yale, we focus on optimizing the distribution and'' mobility of charge carriers that enter the ferroelectriclayers near the interface in the on state, building on previous experiment'al and theoretical resultson PZT/LNO heterostructures. The materials and devices studied here theoretically and experimentally will enable the fabrication of electronic circuits that can significantly reduce standby power consumption of portable electronics. Devices with reduced power consumption are required for sensors and electronics that rely on energy harvesting for operation and aresuited for integration into systems to support adaptive persistent surveillance.

StatusActive
Effective start/end date4/12/17 → …

Funding

  • U.S. Navy: $126,672.00

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