This letter reports on a 1 × 16 Pt/4H-SiC Schottky photodiode array with a total detection area of 136.5 mm2 operating at the wavelength from 400 nm down to 7.5 nm. The array has an ultra low leakage current of 6.4 and 51 fA at -0.4 and -5 V, respectively. In the vacuum ultraviolet (UV) range from 200 nm down to 10 nm, the quantum efficiency (QE) falls to a minimum of 30% at 160 nm, exceeds 100% at wavelengths shorter than 61 nm, and reaches 10 e-/photon at 10 nm, indicating the array has a high sensitivity. The maximum QE in the near UV range is 78% at 230 nm. The spectral detectivity is higher than 1015 cm Hz1/2/W in the wavelength range from 350 nm down to 7.5 nm. Crosstalk between adjacent pixels is investigated. A UV spectroscopic system using the photodiode array with a fine dispersion resolution of 1.5 nm/pixel has been demonstrated.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
- 4H-silicon carbide
- Schottky photodiode array
- Spectral detectivity