1,530V, 17.5 mωcm2normally-off 4H-SiC VJFET design, fabrication and characterization

L. Fursin, X. Li, J. H. Zhao

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

This paper reports the design, fabrication and characterization of a double-gated, normally-off 4H-SiC VJFETs with implanted vertical channel, which eliminates the need of epitaxial re-growth in the middle of the device fabrication. A normally-off VJFET, which is based on a 15μm n-type drift layer doped to n=5.7×1015cm-3, is demonstrated with a blocking voltage (VB) of 1,530V with a leakage current of 15mA. The specific on-resistance (RSP_ON) is found to be 17.5 mωcm 2 at JD=100A/cm2 and VG=3.5V. The VJFET conducts a drain current of 1.13A (227A/cm2) at V G=3.5V and VD=5V with a corresponding gate current of 16mA, resulting in an ID/IG ratio of 70. VJFETs with different lateral JFET channel opening dimensions have been designed and fabricated. Detailed design, fabrication and characterization results of the VJFETs are reported, including the DC I-V relations, the effects of LJFET channel opening dimensions, the specific on-resistance, and the temperature-dependent performance.

Original languageEnglish (US)
Pages (from-to)1157-1160
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberII
StatePublished - 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • 4H-SiC
  • High voltage
  • JFET
  • Power junction field-effect transistor

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