@inproceedings{6e6730c27a644bf6b2718e5062eff885,
title = "1600 V, 5, 1mΩ·cm24H-SiC BJT with a high current gain of β=70",
abstract = "This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors (BJTs). A fabricated 1600 V - 15 A 4H-SiC power BJT with an active area of 1.7 mm 2 shows a high DC current gain (β) of 70, when it conducts 9.8 A collector current at a base current of only 140 mA. The maximum AC current gain (ΔIc/ΔIb) is up to 78. This high performance BJT has an open base collector-to-emitter blocking voltage (Vceo) of over 1674 V with a leakage current of 1.6 μA, and a specific on-resistance (Rsp-on) of 5.1 mΩ.cm2 when it conducts 7.0 A (412 A/cm2) at a forward voltage drop of Vce = 2.1 V. A large area 4H-SiC BJT with a footprint of 4.1 mm × 4.1 mm has also shown a DC current gain over 50. These high-gain, high-voltage and high-current 4H-SiC BJTs further support a promising future for 4H-SiC BJT applications.",
keywords = "Bipolar junction transistor, Power transistor, Silicon carbide",
author = "Jianhui Zhang and Petre Alexandrov and Zhao, {Jian H.}",
year = "2009",
language = "English (US)",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1155--1158",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}