1677 V, 5.7 mΩ · cm2 4H-SiC BJTs

Jianhui Zhang, Petre Alexandrov, Jian H. Zhao, Terry Burke

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (RSP_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE = 3.0 V, corresponding to a low RSP_ON of 5.7 mΩ · cm2 up to Jc= 525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.

Original languageEnglish (US)
Pages (from-to)188-190
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - Mar 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


  • Bipolar junction transistors (BJTs)
  • Power transistors
  • Silicon carbide


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