1677 V, 5.7 mΩ · cm2 4H-SiC BJTs

Jianhui Zhang; Petre Alexandrov; Jian H. Zhao; Terry Burke

doi:10.1109/LED.2005.843928

1677 V, 5.7 mΩ · cm² 4H-SiC BJTs

Jianhui Zhang, Petre Alexandrov, Jian H. Zhao, Terry Burke

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (R_{SP_ON}). A single BJT cell with an active area of 0.61 mm² achieves an open base collector-to-emitter blocking voltage (V_ceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of V_CE = 3.0 V, corresponding to a low R_{SP_ON} of 5.7 mΩ · cm₂ up to Jc= 525 A/cm₂ and a record high value of V_B²/R_{SP_ON} of 493 MW/cm².

Original language	English (US)
Pages (from-to)	188-190
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2005.843928
State	Published - Mar 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Bipolar junction transistors (BJTs)
Power transistors
Silicon carbide

Access to Document

10.1109/LED.2005.843928

Cite this

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title = "1677 V, 5.7 mΩ · cm2 4H-SiC BJTs",

abstract = "This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (RSP_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE = 3.0 V, corresponding to a low RSP_ON of 5.7 mΩ · cm2 up to Jc= 525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.",

keywords = "Bipolar junction transistors (BJTs), Power transistors, Silicon carbide",

author = "Jianhui Zhang and Petre Alexandrov and Zhao, {Jian H.} and Terry Burke",

note = "Funding Information: Manuscript received November 3, 2004; revised January 11, 2005. This work was funded in part by United Silicon Carbide, Inc., and in part by the TACOM SBIR program under DAAE07–02-C-L050. The review of this letter was arranged by Editor K.T. Kornegay. J. Zhang and J. H. Zhao are with SiCLAB, Electrical and Computer Engineering Department, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 USA. P. Alexandrov is with United Silicon Carbide, Inc, New Brunswick Technology Center, New Brunswick, NJ 08901 USA. T. Burke is with U.S. Army TACOM, Warren, MI 48397 USA. Digital Object Identifier 10.1109/LED.2005.843928",

year = "2005",

month = mar,

doi = "10.1109/LED.2005.843928",

language = "English (US)",

volume = "26",

pages = "188--190",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - 1677 V, 5.7 mΩ · cm2 4H-SiC BJTs

AU - Zhang, Jianhui

AU - Alexandrov, Petre

AU - Zhao, Jian H.

AU - Burke, Terry

N1 - Funding Information: Manuscript received November 3, 2004; revised January 11, 2005. This work was funded in part by United Silicon Carbide, Inc., and in part by the TACOM SBIR program under DAAE07–02-C-L050. The review of this letter was arranged by Editor K.T. Kornegay. J. Zhang and J. H. Zhao are with SiCLAB, Electrical and Computer Engineering Department, Rutgers, The State University of New Jersey, Piscataway, NJ 08854 USA. P. Alexandrov is with United Silicon Carbide, Inc, New Brunswick Technology Center, New Brunswick, NJ 08901 USA. T. Burke is with U.S. Army TACOM, Warren, MI 48397 USA. Digital Object Identifier 10.1109/LED.2005.843928

PY - 2005/3

Y1 - 2005/3

N2 - This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (RSP_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE = 3.0 V, corresponding to a low RSP_ON of 5.7 mΩ · cm2 up to Jc= 525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.

AB - This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (RSP_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE = 3.0 V, corresponding to a low RSP_ON of 5.7 mΩ · cm2 up to Jc= 525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.

KW - Bipolar junction transistors (BJTs)

KW - Power transistors

KW - Silicon carbide

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