1710-V 2.77-mΩcm2 4H-SiC trenched and implanted vertical junction field-effect transistors

Jian Zhao, Kiyoshi Tone, Petre Alexandrov, Leonid Fursin, Maurice Weiner

Research output: Contribution to journalArticle

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Abstract

This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p+n junction gates are created on the sidewalls of deep trenches by angled Al implantation, which eliminates the need for epitaxial regrowth during the JFET fabrication [1], [2], Blocking voltages up to 1710 V has been achieved with a voltage supporting drift layer of only 9.5 μm by using a two-step junction termination extension. The TI-VJFET shows a low specific on-resistance RO N-sP of 2.77 mΩcm2, corresponding to a record high value of VB/RO N-sP equal to 1056 MW/cm2.

Original languageEnglish (US)
Pages (from-to)81-83
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number2
DOIs
StatePublished - Feb 1 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • 4H-SiC
  • High current density
  • High voltage
  • Power junction field-effect transistor (JFET)

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