This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p+n junction gates are created on the sidewalls of deep trenches by angled Al implantation, which eliminates the need for epitaxial regrowth during the JFET fabrication , , Blocking voltages up to 1710 V has been achieved with a voltage supporting drift layer of only 9.5 μm by using a two-step junction termination extension. The TI-VJFET shows a low specific on-resistance RO N-sP of 2.77 mΩcm2, corresponding to a record high value of VB/RO N-sP equal to 1056 MW/cm2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- High current density
- High voltage
- Power junction field-effect transistor (JFET)