@inproceedings{1baf6000b0b447f78ebbc53c4499d536,
title = "1836 V, 4.7 mΩ-cm2 high power 4H-SiC bipolar junction transistor",
abstract = "This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7×10 15 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (J c=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 mΩ·cm2. From VCE=2.4 V to V CE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 mΩ·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A very-large area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.",
keywords = "Bipolar junction transistor (BJT), High temperature, High voltage, Low on-resistance",
author = "Jianhui Zhang and Jian Wu and Petre Alexandrov and Terry Burke and Kuang Sheng and Zhao, {Jian H.}",
year = "2006",
doi = "10.4028/0-87849-425-1.1417",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1417--1420",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}