4.3 kV 4H-SiC merged PiN/Schottky diodes

Jian Wu, Leonid Fursin, Yuzhu Li, Petre Alexandrov, M. Weiner, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (VB) of 4.3 kV and a specific on-resistance (Ron) of 20.9 mΩ cm2, the figure-of-merit (FOM), equal to V2B/Ron, is 885 MW cm-2. Both the blocking voltage and FOM are among the highest levels reported to date. The trade-off between forward conduction and reverse leakage is experimentally investigated to analyse the optimum range of Schottky spacing.

Original languageEnglish (US)
Article number027
Pages (from-to)987-991
Number of pages5
JournalSemiconductor Science and Technology
Issue number7
StatePublished - Jul 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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