4.3 kV 4H-SiC merged PiN/Schottky diodes

Jian Wu; Leonid Fursin; Yuzhu Li; Petre Alexandrov; M. Weiner; J. H. Zhao

doi:10.1088/0268-1242/21/7/027

4.3 kV 4H-SiC merged PiN/Schottky diodes

Jian Wu, Leonid Fursin, Yuzhu Li, Petre Alexandrov, M. Weiner, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (V_B) of 4.3 kV and a specific on-resistance (R_on) of 20.9 mΩ cm², the figure-of-merit (FOM), equal to V²_B/R_on, is 885 MW cm^-2. Both the blocking voltage and FOM are among the highest levels reported to date. The trade-off between forward conduction and reverse leakage is experimentally investigated to analyse the optimum range of Schottky spacing.

Original language	English (US)
Article number	027
Pages (from-to)	987-991
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/21/7/027
State	Published - Jul 1 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/7/027

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title = "4.3 kV 4H-SiC merged PiN/Schottky diodes",

abstract = "The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (VB) of 4.3 kV and a specific on-resistance (Ron) of 20.9 mΩ cm2, the figure-of-merit (FOM), equal to V2B/Ron, is 885 MW cm-2. Both the blocking voltage and FOM are among the highest levels reported to date. The trade-off between forward conduction and reverse leakage is experimentally investigated to analyse the optimum range of Schottky spacing.",

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T1 - 4.3 kV 4H-SiC merged PiN/Schottky diodes

AU - Wu, Jian

AU - Fursin, Leonid

AU - Li, Yuzhu

AU - Alexandrov, Petre

AU - Weiner, M.

AU - Zhao, J. H.

PY - 2006/7/1

Y1 - 2006/7/1

N2 - The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (VB) of 4.3 kV and a specific on-resistance (Ron) of 20.9 mΩ cm2, the figure-of-merit (FOM), equal to V2B/Ron, is 885 MW cm-2. Both the blocking voltage and FOM are among the highest levels reported to date. The trade-off between forward conduction and reverse leakage is experimentally investigated to analyse the optimum range of Schottky spacing.

AB - The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (VB) of 4.3 kV and a specific on-resistance (Ron) of 20.9 mΩ cm2, the figure-of-merit (FOM), equal to V2B/Ron, is 885 MW cm-2. Both the blocking voltage and FOM are among the highest levels reported to date. The trade-off between forward conduction and reverse leakage is experimentally investigated to analyse the optimum range of Schottky spacing.

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DO - 10.1088/0268-1242/21/7/027

M3 - Article

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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ER -

4.3 kV 4H-SiC merged PiN/Schottky diodes

Abstract

All Science Journal Classification (ASJC) codes

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