This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8 mum created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5 μm. Normally off operation (VGS=0V) with a blocking voltage Vbr of 430 V has been achieved with a specific on-resistance Ron-sp of 12.4 mΩ · cm2, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a Vbr2/Ron-sp value of 15 MW/cm2. This is among the best Vbr2/ Ron-sp figure-of-merit reported to date for 4H-SiC lateral high-voltage devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Junction field-effect transistor (JFET)
- Normally OFF
- Silicon carbide (SiC)
- Vertical channel