430-V 12.4-mΩ · cm2 normally off 4H-SiC lateral JFET

Ming Su, Kuang Sheng, Yuzhu Li, Yongxi Zhang, Jian Wu, Jian H. Zhao, Jianhui Zhang, Larry X. Li

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8 mum created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5 μm. Normally off operation (VGS=0V) with a blocking voltage Vbr of 430 V has been achieved with a specific on-resistance Ron-sp of 12.4 mΩ · cm2, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a Vbr2/Ron-sp value of 15 MW/cm2. This is among the best Vbr2/ Ron-sp figure-of-merit reported to date for 4H-SiC lateral high-voltage devices.

Original languageEnglish (US)
Pages (from-to)834-836
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number10
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Implantation
  • Junction field-effect transistor (JFET)
  • Normally OFF
  • Silicon carbide (SiC)
  • Vertical channel

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