4H-SiC bipolar junction transistors with graded base doping profile

Jianhui Zhang, Leonid Fursin, Xueqing Li, Xiaohui Wang, Jian H. Zhao, Brenda L. Vanmil, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations


This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuouslygrown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ∼33, specific onresistance of 2.9 mΩ·cm2, and blocking voltage VCEO of over 1000 V.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9780878493340
StatePublished - 2009

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Bipolar junction transistor
  • Graded doping
  • High voltage
  • Low specific on-resistance
  • Power transistor


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