4H-SiC BJT and Darlington switch for power inverter applications

X. Li, Y. Luo, L. Fursin, J. H. Zhao, M. Pan, P. Alexandrov, M. Weiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, the temperature coefficient of 4H-SiC NPN BJT current gain is studied by performing two-dimensional numerical simulations with the ISE SiC TCAD module. It is shown that, depending on the carrier lifetime and base doping level, 4H-SiC NPN BJTs with Al-doped base could have both PTC and NTC. We report the fabrication of a 4H-SiC BJT with an NTC in current gain, a current gain of β=9 and a BVceo of 800 V. We also report the first demonstration of packaged 4H-SiC power BJTs operating in an all-SiC inductively-loaded half-bridge inverter up to 8.8 kW and the first demonstration of a 4H-SiC Darlington switch as well as its performance in an inductively-loaded half-bridge inverter.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9-12
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - Jan 1 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period12/5/0112/7/01

Fingerprint

Demonstrations
Switches
Factor IX
Carrier lifetime
Doping (additives)
Fabrication
Computer simulation
Temperature
thiazole-4-carboxamide adenine dinucleotide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Li, X., Luo, Y., Fursin, L., Zhao, J. H., Pan, M., Alexandrov, P., & Weiner, M. (2001). 4H-SiC BJT and Darlington switch for power inverter applications. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 9-12). [984426] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984426
Li, X. ; Luo, Y. ; Fursin, L. ; Zhao, J. H. ; Pan, M. ; Alexandrov, P. ; Weiner, M. / 4H-SiC BJT and Darlington switch for power inverter applications. 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 9-12 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).
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Li, X, Luo, Y, Fursin, L, Zhao, JH, Pan, M, Alexandrov, P & Weiner, M 2001, 4H-SiC BJT and Darlington switch for power inverter applications. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984426, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 9-12, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 12/5/01. https://doi.org/10.1109/ISDRS.2001.984426

4H-SiC BJT and Darlington switch for power inverter applications. / Li, X.; Luo, Y.; Fursin, L.; Zhao, J. H.; Pan, M.; Alexandrov, P.; Weiner, M.

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 9-12 984426 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this paper, the temperature coefficient of 4H-SiC NPN BJT current gain is studied by performing two-dimensional numerical simulations with the ISE SiC TCAD module. It is shown that, depending on the carrier lifetime and base doping level, 4H-SiC NPN BJTs with Al-doped base could have both PTC and NTC. We report the fabrication of a 4H-SiC BJT with an NTC in current gain, a current gain of β=9 and a BVceo of 800 V. We also report the first demonstration of packaged 4H-SiC power BJTs operating in an all-SiC inductively-loaded half-bridge inverter up to 8.8 kW and the first demonstration of a 4H-SiC Darlington switch as well as its performance in an inductively-loaded half-bridge inverter.

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Li X, Luo Y, Fursin L, Zhao JH, Pan M, Alexandrov P et al. 4H-SiC BJT and Darlington switch for power inverter applications. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 9-12. 984426. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). https://doi.org/10.1109/ISDRS.2001.984426