4H-SIC junction-barrier Schottky diodes with high forward current densities

Kiyoshi Tone, Jian H. Zhao, Maurice Weiner, Menghan Pan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

4H-SiC junction-barrier Schottky (JBS) diodes blocking 1000 V have been fabricated. I-V characteristics have been evaluated at room temperature and 255 °C in comparison with the Schottky barrier (SB) and pin diodes fabricated on the same wafer. While the low reverse leakage confirms the functioning of JBS, the high forward current densities of 630 and 210 A cm-2 at 4.0 Vat room temperature and 255 °C, respectively, with only ∼20% reduction from those of the SB diodes, clearly demonstrate that the SiC JBS diodes can be fabricated with acceptable sacrifice in the forward current capacities.

Original languageEnglish (US)
Pages (from-to)594-597
Number of pages4
JournalSemiconductor Science and Technology
Volume16
Issue number7
DOIs
StatePublished - Jul 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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