4H-SiC LJFET-based power IC using depletion load

Ming Su; Kuang Sheng; Jian H. Zhao; Xueqing Li

doi:10.1109/ISDRS.2009.5378114

4H-SiC LJFET-based power IC using depletion load

Ming Su, Kuang Sheng, Jian H. Zhao, Xueqing Li

School of Engineering, Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378114
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378114

Cite this

@inproceedings{281cc272597145308c9fe4e47fc04c74,

title = "4H-SiC LJFET-based power IC using depletion load",

author = "Ming Su and Kuang Sheng and Zhao, {Jian H.} and Xueqing Li",

year = "2009",

doi = "10.1109/ISDRS.2009.5378114",

language = "English (US)",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Su, M, Sheng, K, Zhao, JH & Li, X 2009, 4H-SiC LJFET-based power IC using depletion load. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378114, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378114

TY - GEN

T1 - 4H-SiC LJFET-based power IC using depletion load

AU - Su, Ming

AU - Sheng, Kuang

AU - Zhao, Jian H.

AU - Li, Xueqing

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949416748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949416748&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378114

DO - 10.1109/ISDRS.2009.5378114

M3 - Conference contribution

AN - SCOPUS:77949416748

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

4H-SiC LJFET-based power IC using depletion load

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

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Cite this