4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm

Jun Hu, Xiaobin Xin, Xueqing Li, Jian H. Zhao, Brenda L. VanMil, Kok Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

This paper reports on a 4H-SiC single-photon avalanche diode (SPAD) operating at UV wavelengths of 280 and 350 nm. The SPAD shows low dark currents of 20 and 57 fA at 80 V and 90% breakdown voltage, respectively. The quantum efficiency (QE) reaches its peak of 43% at 270 nm and is < 0.007% at 400 nm, indicating a high UV-to-visible rejection ratio of > 6100. The 4H-SiC SPAD shows a fast self-quenching and a high photon count rate of 1.44 MHz in the passive-quenching mode. At the wavelength of 280 nm, a single-photon detection efficiency (SPDE) of 2.83% with a low dark count rate of 22 kHz is achieved at the reverse bias of 116.8 V. The SPDE at 350 nm is lower, which is 0.195%, owing to the correspondingly smaller QE. Optimization measurements were conducted on SPDE as a function of voltage bias and signal output threshold.

Original languageEnglish (US)
Pages (from-to)1977-1983
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • 4H-silicon carbide
  • Counting efficiency (CE)
  • Dark count rate (DCR)
  • Passive quenching
  • Single-photon avalanche diode (SPAD)
  • Single-photon detection efficiency (SPDE)
  • Visible blind

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