4H-SiC visible blind UV avalanche photodiode

F. Yan; Y. Luo; J. H. Zhao; G. H. Olsen

doi:10.1049/el:19990641

4H-SiC visible blind UV avalanche photodiode

F. Yan
, Y. Luo
, J. H. Zhao
, G. H. Olsen

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257 °C is also discussed.

Original language	English (US)
Pages (from-to)	929-930
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1049/el:19990641
State	Published - May 27 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990641

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@article{7c1b133559234242bea22850deeba7ab,

title = "4H-SiC visible blind UV avalanche photodiode",

abstract = "The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257 °C is also discussed.",

author = "F. Yan and Y. Luo and Zhao, \{J. H.\} and Olsen, \{G. H.\}",

year = "1999",

month = may,

day = "27",

doi = "10.1049/el:19990641",

language = "English (US)",

volume = "35",

pages = "929--930",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "11",

}

TY - JOUR

T1 - 4H-SiC visible blind UV avalanche photodiode

AU - Yan, F.

AU - Luo, Y.

AU - Zhao, J. H.

AU - Olsen, G. H.

PY - 1999/5/27

Y1 - 1999/5/27

N2 - The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257 °C is also discussed.

AB - The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257 °C is also discussed.

UR - https://www.scopus.com/pages/publications/0032657521

UR - https://www.scopus.com/pages/publications/0032657521#tab=citedBy

U2 - 10.1049/el:19990641

DO - 10.1049/el:19990641

M3 - Article

AN - SCOPUS:0032657521

SN - 0013-5194

VL - 35

SP - 929

EP - 930

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

4H-SiC visible blind UV avalanche photodiode

Abstract

All Science Journal Classification (ASJC) codes

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