6A, 1kV 4H-SiC normally-off trenched-and-Lmplanted vertical JFETs

J. H. Zhao, K. Tone, X. Li, P. Alexandrov, L. Fursin, M. Weiner

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

This paper presents the design, fabrication and characterization of 4H-SiC trenched-and-implanted vertical JFETs (TI-VJFETs). The design of TI-VJFETs with active areas of 9.38×10-2 mm2 and 2.03mm2 and different vertical channel openings is presented based on a blocking layer of 9.4μm, doped to n=7×1015cm-3. Highly vertical channel defined by trench etching and angled implantation of Al makes it possible to accurately control the vertical channel dimension, resulting in TI-VJFETs with very low specific on-resistance. The TI-VJFET technology developed under this work is believed to be advantageous in comparison to other reported VJFET technologies because (a) it eliminates the need for epitaxial regrowth in middle of the device fabrication, (b) only one mask requires critical alignment throughout device fabrication, and (c) it provides intrinsically a much lower specific on-resistance due to the elimination of internal lateral JFET gates. Successful applications of the technologies to the development of single-cell TI-VJFETs with power level of 6A -1,000V are reported.

Original languageEnglish (US)
Pages (from-to)1213-1216
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberII
StatePublished - Jan 1 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Edge termination
  • Implantation
  • Self-alignment
  • VJFET

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