A GaAs passive mixer with an ultra-wide IF bandwidth

Tiedi Zhang, Lei Wang, Chung Tse Michael Wu, Ruimin Xu

Research output: Contribution to journalLetter

1 Citation (Scopus)

Abstract

This paper presents a GaAs double-balanced mixer (DBM) applying an improved Marchand balun. This structure is achieved by adding a frequency-tuning tail capacitor to the end of the imbalanced coil. By using this tail capacitor, the size of balun is greatly reduced and the IF bandwidth is largely extended. The equivalent circuit modeling and working principle of this structure are described in this paper. The RF bandwidth of the proposed mixer is from 6GHz to 18GHz. The measurement result shows that the mixer’s IF bandwidth ranges from DC to 8GHz with the conversion loss less than 10dB. Because of the good amplitude and phase performance of the proposed balun, the LO to IF isolation is also improved. The total chip area is 950 × 600µm2.

Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalIEICE Electronics Express
Volume14
Issue number1
DOIs
StatePublished - Jan 1 2017
Externally publishedYes

Fingerprint

bandwidth
Bandwidth
capacitors
Capacitors
equivalent circuits
Equivalent circuits
isolation
coils
Tuning
direct current
chips
tuning
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • High isolation
  • Marchand balun
  • Passive mixer
  • Wide IF mixer
  • Wideband

Cite this

Zhang, Tiedi ; Wang, Lei ; Wu, Chung Tse Michael ; Xu, Ruimin. / A GaAs passive mixer with an ultra-wide IF bandwidth. In: IEICE Electronics Express. 2017 ; Vol. 14, No. 1. pp. 1-6.
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abstract = "This paper presents a GaAs double-balanced mixer (DBM) applying an improved Marchand balun. This structure is achieved by adding a frequency-tuning tail capacitor to the end of the imbalanced coil. By using this tail capacitor, the size of balun is greatly reduced and the IF bandwidth is largely extended. The equivalent circuit modeling and working principle of this structure are described in this paper. The RF bandwidth of the proposed mixer is from 6GHz to 18GHz. The measurement result shows that the mixer’s IF bandwidth ranges from DC to 8GHz with the conversion loss less than 10dB. Because of the good amplitude and phase performance of the proposed balun, the LO to IF isolation is also improved. The total chip area is 950 × 600µm2.",
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A GaAs passive mixer with an ultra-wide IF bandwidth. / Zhang, Tiedi; Wang, Lei; Wu, Chung Tse Michael; Xu, Ruimin.

In: IEICE Electronics Express, Vol. 14, No. 1, 01.01.2017, p. 1-6.

Research output: Contribution to journalLetter

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AU - Zhang, Tiedi

AU - Wang, Lei

AU - Wu, Chung Tse Michael

AU - Xu, Ruimin

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N2 - This paper presents a GaAs double-balanced mixer (DBM) applying an improved Marchand balun. This structure is achieved by adding a frequency-tuning tail capacitor to the end of the imbalanced coil. By using this tail capacitor, the size of balun is greatly reduced and the IF bandwidth is largely extended. The equivalent circuit modeling and working principle of this structure are described in this paper. The RF bandwidth of the proposed mixer is from 6GHz to 18GHz. The measurement result shows that the mixer’s IF bandwidth ranges from DC to 8GHz with the conversion loss less than 10dB. Because of the good amplitude and phase performance of the proposed balun, the LO to IF isolation is also improved. The total chip area is 950 × 600µm2.

AB - This paper presents a GaAs double-balanced mixer (DBM) applying an improved Marchand balun. This structure is achieved by adding a frequency-tuning tail capacitor to the end of the imbalanced coil. By using this tail capacitor, the size of balun is greatly reduced and the IF bandwidth is largely extended. The equivalent circuit modeling and working principle of this structure are described in this paper. The RF bandwidth of the proposed mixer is from 6GHz to 18GHz. The measurement result shows that the mixer’s IF bandwidth ranges from DC to 8GHz with the conversion loss less than 10dB. Because of the good amplitude and phase performance of the proposed balun, the LO to IF isolation is also improved. The total chip area is 950 × 600µm2.

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