A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang, Yanbin Luo, Petre Alexandrov, Leonid Fursin, Jian H. Zhao

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (Jc = 239 A/cm2) at Vce = 3.4 V, corresponding to a specific on-resistance (Rsp-on) of 14 mΩcm2, based on a drift layer design of 12 μm doped to 6 × 1015 cm-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from Jc = 40 A/cm2 to 239 A/cm2 (Ic = 2.1 A) with a peak current gain of 38 at Jc = 114 A/cm2.

Original languageEnglish (US)
Pages (from-to)327-329
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number5
DOIs
StatePublished - May 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Bipolar junction transistors (BJTs)
  • Power transistors
  • Silicon carbide

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