This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (Jc = 239 A/cm2) at Vce = 3.4 V, corresponding to a specific on-resistance (Rsp-on) of 14 mΩcm2, based on a drift layer design of 12 μm doped to 6 × 1015 cm-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from Jc = 40 A/cm2 to 239 A/cm2 (Ic = 2.1 A) with a peak current gain of 38 at Jc = 114 A/cm2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Bipolar junction transistors (BJTs)
- Power transistors
- Silicon carbide