A high performance 4H-SiC normally-off VJFET

J. H. Zhao, K. Tone, K. Sheng, X. Li, P. Alexandrov, L. Fursin, M. Weiner, T. Burke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFET s demonstrated a 3.9Ω resistance at VG=5V (with negligible gate current) and JD=154A/cm2, corresponding to a low specific on-resistance of 3.7mΩcm2 for a normally-off VJFET blocking voltage up to 1,734V (at VG=0V). The specific on-resistance is more than 200 times smaller than that of the theoretical limit of Si FETs. The figure-of-merit (FOM, Vbl2/RON-sp), is equal to 815MW/cm2 for the demonstrated VJFET, substantially surpassing the best FOM of any kind of unipolar and bipolar SiC power switches.

Original languageEnglish (US)
Title of host publicationConference Proceedings - IPEMC 2004
Subtitle of host publication4th International Power Electronics and Motion Control Conference
EditorsZ. Wang
Pages342-346
Number of pages5
StatePublished - 2004
EventConference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference - Xi'an, China
Duration: Aug 14 2004Aug 16 2004

Publication series

NameConference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference
Volume1

Other

OtherConference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference
Country/TerritoryChina
CityXi'an
Period8/14/048/16/04

All Science Journal Classification (ASJC) codes

  • General Engineering

Keywords

  • Figure-of-merit
  • JFET
  • On-resistance
  • SiC

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