@inproceedings{17a42a5528fa4bb9877382c0fd4afd56,
title = "A high performance 4H-SiC normally-off VJFET",
abstract = "This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFET s demonstrated a 3.9Ω resistance at VG=5V (with negligible gate current) and JD=154A/cm2, corresponding to a low specific on-resistance of 3.7mΩcm2 for a normally-off VJFET blocking voltage up to 1,734V (at VG=0V). The specific on-resistance is more than 200 times smaller than that of the theoretical limit of Si FETs. The figure-of-merit (FOM, Vbl2/RON-sp), is equal to 815MW/cm2 for the demonstrated VJFET, substantially surpassing the best FOM of any kind of unipolar and bipolar SiC power switches.",
keywords = "Figure-of-merit, JFET, On-resistance, SiC",
author = "Zhao, {J. H.} and K. Tone and K. Sheng and X. Li and P. Alexandrov and L. Fursin and M. Weiner and T. Burke",
year = "2004",
language = "English (US)",
isbn = "7560518699",
series = "Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference",
pages = "342--346",
editor = "Z. Wang",
booktitle = "Conference Proceedings - IPEMC 2004",
note = "Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference ; Conference date: 14-08-2004 Through 16-08-2004",
}