A high-slew rate SiGe BiCMOS operational amplifier for operation down to deep cryogenic temperatures

Ramkumar Krithivasan, Yuan Lu, Laleh Najafizadeh, Chendong Zhu, John D. Cressler, Suheng Chen, Chandradevi Ulaganathan, Benjamin J. Blalock

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations

Abstract

We investigate, for the first time, the design and implementation of a high-slew rate op-amp in SiGe BiCMOS technology capable of operation across very wide temperature ranges, and down to deep cryogenic temperatures. We achieve the first monolithic op-amp (for any material system) capable of operating reliably down to 4.3 K. Two variants of the SiGe BiCMOS op-amp were implemented using alternative biasing schemes, and the effects of temperature on these biasing schemes, and their impact on the overall op-amp performance, is investigated.

Original languageEnglish (US)
Title of host publication2006 Bipolar/BiCMOS Circuits and Technology Meeting
DOIs
StatePublished - Dec 1 2006
Externally publishedYes
Event2006 Bipolar/BiCMOS Circuits and Technology Meeting - Maastricht, Netherlands
Duration: Sep 10 2006Sep 13 2006

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Other

Other2006 Bipolar/BiCMOS Circuits and Technology Meeting
CountryNetherlands
CityMaastricht
Period9/10/069/13/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Krithivasan, R., Lu, Y., Najafizadeh, L., Zhu, C., Cressler, J. D., Chen, S., Ulaganathan, C., & Blalock, B. J. (2006). A high-slew rate SiGe BiCMOS operational amplifier for operation down to deep cryogenic temperatures. In 2006 Bipolar/BiCMOS Circuits and Technology Meeting [4100238] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2006.311170