A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

J. H. Zhao; J. Zhang; P. Alexandrov; X. Li; T. Burke

doi:10.4028/www.scientific.net/msf.457-460.1173

A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

J. H. Zhao, J. Zhang, P. Alexandrov, X. Li, T. Burke

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mω·cm² at 50A/cm² and 12mω·cm² at 356A/cm²) based on a drift layer of only 12μm, doped to 8.5ω·10¹⁵ cm^-3. The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.

Original language	English (US)
Pages (from-to)	1173-1176
Number of pages	4
Journal	Materials Science Forum
Volume	457-460
Issue number	II
DOIs	https://doi.org/10.4028/www.scientific.net/msf.457-460.1173
State	Published - 2004
Event	Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Bipolar junction transistors (BJTs)
Power transistors
Silicon carbide

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10.4028/www.scientific.net/msf.457-460.1173

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title = "A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer",

abstract = "This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mω·cm2 at 50A/cm2 and 12mω·cm2 at 356A/cm2) based on a drift layer of only 12μm, doped to 8.5ω·1015 cm-3. The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.",

keywords = "Bipolar junction transistors (BJTs), Power transistors, Silicon carbide",

author = "Zhao, {J. H.} and J. Zhang and P. Alexandrov and X. Li and T. Burke",

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doi = "10.4028/www.scientific.net/msf.457-460.1173",

language = "English (US)",

volume = "457-460",

pages = "1173--1176",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "II",

note = "Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 ; Conference date: 05-10-2003 Through 10-10-2003",

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T1 - A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

AU - Zhao, J. H.

AU - Zhang, J.

AU - Alexandrov, P.

AU - Li, X.

AU - Burke, T.

PY - 2004

Y1 - 2004

N2 - This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mω·cm2 at 50A/cm2 and 12mω·cm2 at 356A/cm2) based on a drift layer of only 12μm, doped to 8.5ω·1015 cm-3. The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.

AB - This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mω·cm2 at 50A/cm2 and 12mω·cm2 at 356A/cm2) based on a drift layer of only 12μm, doped to 8.5ω·1015 cm-3. The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.

KW - Bipolar junction transistors (BJTs)

KW - Power transistors

KW - Silicon carbide

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AN - SCOPUS:7644230793

SN - 0255-5476

VL - 457-460

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JO - Materials Science Forum

JF - Materials Science Forum

IS - II

T2 - Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003

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ER -

A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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