A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

J. H. Zhao, J. Zhang, P. Alexandrov, X. Li, T. Burke

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mω·cm2 at 50A/cm2 and 12mω·cm2 at 356A/cm2) based on a drift layer of only 12μm, doped to 8.5ω·1015 cm-3. The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature current-voltage characteristics are also reported.

Original languageEnglish (US)
Pages (from-to)1173-1176
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberII
DOIs
StatePublished - Jan 1 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Bipolar junction transistors (BJTs)
  • Power transistors
  • Silicon carbide

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