A Model for Silicon Self‐Diffusion in Silicon Carbide: Anti‐Site Defect Motion

A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single‐crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti‐site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.