A new ESD protection structure for high-speed GaAs RF ICs

Maoyou Sun, Yicheng Lu

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We demonstrate a new electrostatic discharge (ESD) protection structure for high-speed Gaze RF ICs. The structure is composed of small diodes and large transistors using an InGaP heterojunction bipolar transistor (HBT) technology. Its loading effect and its robustness are evaluated experimentally. The impedance of the new structure at OFF state, represented with an equivalent shunt capacitance and an equivalent shunt resistance, are 0.22 pF and 500 Ω at 10 GHz. The structure can withstand +2700-V and - 2900-V human body model ESD pulses. It can clamp voltage more effectively than the conventional diode-based ESD structure. The new structure can be used to protect 10 Gb/s input/output pins of high-speed RF ICs against ESD.

Original languageEnglish (US)
Pages (from-to)133-135
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number3
DOIs
StatePublished - Mar 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Bipolar
  • Electrostatic discharge (ESD)
  • GaAs
  • High-speed
  • Human body model (HBM)
  • InGaP heterojunction bipolar transistor (HBT)
  • RF ICs

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