A novel high-voltage normally-off 4H-SiC vertical JFET

J. H. Zhao, X. Li, K. Tone, P. Alexandrov, M. Pan, M. Weiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations


A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x1015cm3doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm2at 300K and 600K, respectively. With a dVG/dt of 1x107V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-1015cm3doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9780878498949
StatePublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • Numerical simulation and fabrication
  • Power devices
  • Vertical JFETs


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