A novel high-voltage normally-off 4H-SiC vertical JFET

J. H. Zhao; X. Li; K. Tone; P. Alexandrov; M. Pan; M. Weiner

doi:10.4028/www.scientific.net/MSF.389-393.1223

A novel high-voltage normally-off 4H-SiC vertical JFET

J. H. Zhao, X. Li, K. Tone, P. Alexandrov, M. Pan, M. Weiner

School of Engineering, Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Scopus citations

Abstract

A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x10¹⁵cm³doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm²at 300K and 600K, respectively. With a dV_G/dt of 1x10⁷V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-10¹⁵cm³doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	1223-1226
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1223
State	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: Oct 28 2001 → Nov 2 2001

Publication series

Name	Materials Science Forum
Volume	389-393
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/Territory	Japan
City	Tsukuba
Period	10/28/01 → 11/2/01

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Numerical simulation and fabrication
Power devices
Vertical JFETs

Access to Document

10.4028/www.scientific.net/MSF.389-393.1223

Cite this

Zhao, J. H., Li, X., Tone, K., Alexandrov, P., Pan, M., & Weiner, M. (2002). A novel high-voltage normally-off 4H-SiC vertical JFET. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1223-1226). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1223

@inproceedings{b7cc32a49f2b4553a0a07cd7e3f143ee,

title = "A novel high-voltage normally-off 4H-SiC vertical JFET",

abstract = "A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x1015cm3doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm2at 300K and 600K, respectively. With a dVG/dt of 1x107V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-1015cm3doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.",

keywords = "Numerical simulation and fabrication, Power devices, Vertical JFETs",

author = "Zhao, {J. H.} and X. Li and K. Tone and P. Alexandrov and M. Pan and M. Weiner",

note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",

year = "2002",

doi = "10.4028/www.scientific.net/MSF.389-393.1223",

language = "English (US)",

isbn = "9780878498949",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "1223--1226",

editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",

booktitle = "Silicon Carbide and Related Materials 2001",

}

Zhao, JH, Li, X, Tone, K, Alexandrov, P, Pan, M & Weiner, M 2002, A novel high-voltage normally-off 4H-SiC vertical JFET. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 1223-1226, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 10/28/01. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1223

TY - GEN

T1 - A novel high-voltage normally-off 4H-SiC vertical JFET

AU - Zhao, J. H.

AU - Li, X.

AU - Tone, K.

AU - Alexandrov, P.

AU - Pan, M.

AU - Weiner, M.

N1 - Publisher Copyright: © (2002) Trans Tech Publications, Switzerland.

PY - 2002

Y1 - 2002

N2 - A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x1015cm3doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm2at 300K and 600K, respectively. With a dVG/dt of 1x107V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-1015cm3doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.

AB - A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x1015cm3doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm2at 300K and 600K, respectively. With a dVG/dt of 1x107V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-1015cm3doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.

KW - Numerical simulation and fabrication

KW - Power devices

KW - Vertical JFETs

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SN - 9780878498949

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BT - Silicon Carbide and Related Materials 2001

A2 - Yoshida, S.

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PB - Trans Tech Publications Ltd

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Y2 - 28 October 2001 through 2 November 2001

ER -

A novel high-voltage normally-off 4H-SiC vertical JFET

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Keywords

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