A novel high-voltage normally-off 4H-SiC vertical JFET

J. H. Zhao, X. Li, K. Tone, P. Alexandrov, M. Pan, M. Weiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

A novel planar high-voltage normally-off 4H-SiC vertical JFET (VJFET) is proposed, modeled and fabricated. Its DC and switching characteristics at 300K and 600K are investigated by way of two-dimensional numerical simulations. A structure with 12μm 6.8x1015cm3doped drift layer is simulated showing blocking voltages of 1644V and 1928V with specific on-resistances of 4.8mΩ cm2 and 19.6mΩ cm2at 300K and 600K, respectively. With a dVG/dt of 1x107V/s, the turnon time is 243ns and the tum-off time is 117ns. Processing technology for the feasibility demonstration has been developed and applied to a structure with a 22μm mid-1015cm3doped drift layer, leading to the successful fabrication of the first 2,510V normally-off SiC VJFET.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages1223-1226
Number of pages4
ISBN (Print)9780878498949
DOIs
StatePublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Numerical simulation and fabrication
  • Power devices
  • Vertical JFETs

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