A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

X. Li, L. Fursin, J. H. Zhao, P. Alexandrov, M. Pan, M. Weiner, T. Burke, G. Khalil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10-3A/cm2at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm2and 134 A/cm2at 300K and 600K respectively. With a dVG/dt of 5.4 × 107V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages1345-1348
Number of pages4
ISBN (Print)9780878498949
DOIs
StatePublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/TerritoryJapan
CityTsukuba
Period10/28/0111/2/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Bipolar transistors
  • High voltage
  • Normally-off
  • Numerical simulation

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