A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

X. Li; L. Fursin; J. H. Zhao; P. Alexandrov; M. Pan; M. Weiner; T. Burke; G. Khalil

doi:10.4028/www.scientific.net/MSF.389-393.1345

A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

X. Li, L. Fursin, J. H. Zhao, P. Alexandrov, M. Pan, M. Weiner, T. Burke, G. Khalil

School of Engineering, Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10^-3A/cm²at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm²and 134 A/cm²at 300K and 600K respectively. With a dV_G/dt of 5.4 × 10⁷V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	1345-1348
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1345
State	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: Oct 28 2001 → Nov 2 2001

Publication series

Name	Materials Science Forum
Volume	389-393
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/Territory	Japan
City	Tsukuba
Period	10/28/01 → 11/2/01

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Bipolar transistors
High voltage
Normally-off
Numerical simulation

Access to Document

10.4028/www.scientific.net/MSF.389-393.1345

Cite this

Li, X., Fursin, L., Zhao, J. H., Alexandrov, P., Pan, M., Weiner, M., Burke, T., & Khalil, G. (2002). A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1345-1348). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1345

@inproceedings{c20663a0dfae4010885238f38ac4f13f,

title = "A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC",

abstract = "In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10-3A/cm2at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm2and 134 A/cm2at 300K and 600K respectively. With a dVG/dt of 5.4 × 107V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.",

keywords = "Bipolar transistors, High voltage, Normally-off, Numerical simulation",

author = "X. Li and L. Fursin and Zhao, {J. H.} and P. Alexandrov and M. Pan and M. Weiner and T. Burke and G. Khalil",

note = "Publisher Copyright: {\textcopyright} (2002) Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 ; Conference date: 28-10-2001 Through 02-11-2001",

year = "2002",

doi = "10.4028/www.scientific.net/MSF.389-393.1345",

language = "English (US)",

isbn = "9780878498949",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "1345--1348",

editor = "S. Yoshida and S. Nishino and H. Harima and T. Kimoto",

booktitle = "Silicon Carbide and Related Materials 2001",

}

Li, X, Fursin, L, Zhao, JH, Alexandrov, P, Pan, M, Weiner, M, Burke, T & Khalil, G 2002, A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 1345-1348, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 10/28/01. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1345

A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC. / Li, X.; Fursin, L.; Zhao, J. H. et al.
Silicon Carbide and Related Materials 2001. ed. / S. Yoshida; S. Nishino; H. Harima; T. Kimoto. Trans Tech Publications Ltd, 2002. p. 1345-1348 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

AU - Li, X.

AU - Fursin, L.

AU - Zhao, J. H.

AU - Alexandrov, P.

AU - Pan, M.

AU - Weiner, M.

AU - Burke, T.

AU - Khalil, G.

N1 - Publisher Copyright: © (2002) Trans Tech Publications, Switzerland.

PY - 2002

Y1 - 2002

N2 - In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10-3A/cm2at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm2and 134 A/cm2at 300K and 600K respectively. With a dVG/dt of 5.4 × 107V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.

AB - In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10-3A/cm2at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm2and 134 A/cm2at 300K and 600K respectively. With a dVG/dt of 5.4 × 107V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.

KW - Bipolar transistors

KW - High voltage

KW - Normally-off

KW - Numerical simulation

UR - http://www.scopus.com/inward/record.url?scp=0036436576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036436576&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.389-393.1345

DO - 10.4028/www.scientific.net/MSF.389-393.1345

M3 - Conference contribution

AN - SCOPUS:0036436576

SN - 9780878498949

T3 - Materials Science Forum

SP - 1345

EP - 1348

BT - Silicon Carbide and Related Materials 2001

A2 - Yoshida, S.

A2 - Nishino, S.

A2 - Harima, H.

A2 - Kimoto, T.

PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials, ICSCRM 2001

Y2 - 28 October 2001 through 2 November 2001

ER -

A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

Abstract

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