In this paper, a novel planar high-voltage normally-off 4H-SiC field gate bipolar transistor (FGBT) is proposed. This transistor is free of gate oxide/insulator and expected to be suitable for high temperature applications. Its static and dynamic characteristics at 300K and 600K. are investigated by performing two-dimensional numerical simulations. It can be turned on with a gate voltage of 2.7V and 2.0V at 300K and 600K respectively. With a 28j^m blocking layer and a horizontal channel opening of 0.15p.m, this bipolar transistor is able to block over 3000V with a leakage current density smaller than 1 × 10-3A/cm2at both 300K and 600K, and achieves a forward current density at 5V of 100 A/cm2and 134 A/cm2at 300K and 600K respectively. With a dVG/dt of 5.4 × 107V/s, the turn-on time is 0.27μs and the turn-off time 1.41μs at 300K. The turn-on time decreases slightly to 0.21μs and the turn-off time increases to 2.05μs at 600K.