A proposed model for ion emission from Si and Ge surfaces under low fluence of UV laser irradiation

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Abstract

A model is proposed to explain the recent observations of ion emission from Si and Ge surfaces under low fluence of UV laser irradiation. The model is based on two concepts: Phillips' bond charge model and internal Auger process (hole stimulated desorption).

Original languageEnglish (US)
Pages (from-to)486-490
Number of pages5
JournalPhysics Letters A
Volume131
Issue number7-8
DOIs
StatePublished - Sep 5 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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