TY - JOUR
T1 - A proposed model for ion emission from Si and Ge surfaces under low fluence of UV laser irradiation
AU - Wu, Z.
N1 - Funding Information:
I am grateful to Dr. J.C. Phillips for his comments on the manuscript. I thank Dr. K. Arya for useful conversation in the early stage of this work. I also wish to thank Professor R. Osgood, director of MSL, for his interest and encouragement. This work was supported by Joint Services Electronics Program under contract DAAL-03-88-C-0009.
PY - 1988/9/5
Y1 - 1988/9/5
N2 - A model is proposed to explain the recent observations of ion emission from Si and Ge surfaces under low fluence of UV laser irradiation. The model is based on two concepts: Phillips' bond charge model and internal Auger process (hole stimulated desorption).
AB - A model is proposed to explain the recent observations of ion emission from Si and Ge surfaces under low fluence of UV laser irradiation. The model is based on two concepts: Phillips' bond charge model and internal Auger process (hole stimulated desorption).
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U2 - 10.1016/0375-9601(88)90307-6
DO - 10.1016/0375-9601(88)90307-6
M3 - Article
AN - SCOPUS:0012901085
VL - 131
SP - 486
EP - 490
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 7-8
ER -