A simple voltage reference using transistor with ZTC point and PTAT current source

Laleh Najafizadeh, Igor M. Filanovsky

Research output: Contribution to journalConference article

20 Scopus citations

Abstract

When a diode-connected MOS transistor is biased with a PTAT current source, the gate-source voltage of such transistor can be temperature independent. Based on this idea a circuit is designed and implemented in a standard 0.18-μm CMOS technology. The simulations show that the output voltage of this reference has the temperature coefficient of 4 ppm/°C in the range of -50°C to 150°C. If this transistor is biased below the zero temperature coefficient (ZTC) point this technique opens the way to design a sub-1 V voltage reference.

Original languageEnglish (US)
Pages (from-to)I909-I912
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
StatePublished - Sep 7 2004
Externally publishedYes
Event2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
Duration: May 23 2004May 26 2004

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Analog electronics
  • Mobility
  • Temperature effects
  • Threshold voltage
  • Voltage references

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