A Study of hole Scattering in Ge by Cyclotron Resonance

Michael Gershenson; E. N. Gusinskii; R. I. Rabinovich; N. V. Soina

doi:10.1002/pssb.2220640143

A Study of hole Scattering in Ge by Cyclotron Resonance

Michael Gershenson, E. N. Gusinskii, R. I. Rabinovich, N. V. Soina

Research output: Contribution to journal › Article › peer-review

Abstract

Scattering of hot holes on acoustical phonons has been investigated experimentally in pure Ge (N_D + N_A ≈ 10¹²cm¹³) at low temperature (1.7 to 4.2 °K) in detail. It is shown that the degeneracy of the valence band influences the scattering of hot heavy and light holes in a different manner. The essential role of interband transitions is demonstrated. The results of the investigation of the influence of the recombination mechanism on the width and shape of the CR line of hot carriers are presented. It is demonstrated that the space distribution of the carriers must be taken into account for a correct interpretation of the experimental results.

Original language	English (US)
Pages (from-to)	367-375
Number of pages	9
Journal	physica status solidi (b)
Volume	64
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2220640143
State	Published - Jan 1 1974
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "Scattering of hot holes on acoustical phonons has been investigated experimentally in pure Ge (ND + NA ≈ 1012cm13) at low temperature (1.7 to 4.2 °K) in detail. It is shown that the degeneracy of the valence band influences the scattering of hot heavy and light holes in a different manner. The essential role of interband transitions is demonstrated. The results of the investigation of the influence of the recombination mechanism on the width and shape of the CR line of hot carriers are presented. It is demonstrated that the space distribution of the carriers must be taken into account for a correct interpretation of the experimental results.",

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AU - Gershenson, Michael

AU - Gusinskii, E. N.

AU - Rabinovich, R. I.

AU - Soina, N. V.

PY - 1974/1/1

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N2 - Scattering of hot holes on acoustical phonons has been investigated experimentally in pure Ge (ND + NA ≈ 1012cm13) at low temperature (1.7 to 4.2 °K) in detail. It is shown that the degeneracy of the valence band influences the scattering of hot heavy and light holes in a different manner. The essential role of interband transitions is demonstrated. The results of the investigation of the influence of the recombination mechanism on the width and shape of the CR line of hot carriers are presented. It is demonstrated that the space distribution of the carriers must be taken into account for a correct interpretation of the experimental results.

AB - Scattering of hot holes on acoustical phonons has been investigated experimentally in pure Ge (ND + NA ≈ 1012cm13) at low temperature (1.7 to 4.2 °K) in detail. It is shown that the degeneracy of the valence band influences the scattering of hot heavy and light holes in a different manner. The essential role of interband transitions is demonstrated. The results of the investigation of the influence of the recombination mechanism on the width and shape of the CR line of hot carriers are presented. It is demonstrated that the space distribution of the carriers must be taken into account for a correct interpretation of the experimental results.

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