Scattering of hot holes on acoustical phonons has been investigated experimentally in pure Ge (ND + NA ≈ 1012cm13) at low temperature (1.7 to 4.2 °K) in detail. It is shown that the degeneracy of the valence band influences the scattering of hot heavy and light holes in a different manner. The essential role of interband transitions is demonstrated. The results of the investigation of the influence of the recombination mechanism on the width and shape of the CR line of hot carriers are presented. It is demonstrated that the space distribution of the carriers must be taken into account for a correct interpretation of the experimental results.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics