We present a content-addressable memory whose central component is a superconducting crossbar array with 2N elements connected by N2 junctions. Because multiple pathways exist between any two elements, this storage device is tolerant to physical defects in the interconnections. Furthermore, each pattern of N bits is stored non-locally in the N2 junctions, so information access and retrieval are tolerant to input errors. This superconducting memory should exhibit picosecond single-bit acquisition times with negligible energy dissipation during switching and multiple non-destructive read-outs of the stored data.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics