A Transconductance Spectroscopy Approach to Device Level Surface State Characterization

Jian H. Zhao; Robert Hwang; Steve Chang

doi:10.1109/16.214747

A Transconductance Spectroscopy Approach to Device Level Surface State Characterization

Jian H. Zhao, Robert Hwang, Steve Chang

School of Engineering, Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al. [1] and the temperature dependence of transconductance dispersion observed by Blight et al. [3].

Original language	English (US)
Pages (from-to)	1172-1174
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	6
DOIs	https://doi.org/10.1109/16.214747
State	Published - Jun 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.214747

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title = "A Transconductance Spectroscopy Approach to Device Level Surface State Characterization",

abstract = "A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al. [1] and the temperature dependence of transconductance dispersion observed by Blight et al. [3].",

author = "Zhao, {Jian H.} and Robert Hwang and Steve Chang",

year = "1993",

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doi = "10.1109/16.214747",

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journal = "IEEE Transactions on Electron Devices",

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AU - Hwang, Robert

AU - Chang, Steve

PY - 1993/6

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N2 - A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al. [1] and the temperature dependence of transconductance dispersion observed by Blight et al. [3].

AB - A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al. [1] and the temperature dependence of transconductance dispersion observed by Blight et al. [3].

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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A Transconductance Spectroscopy Approach to Device Level Surface State Characterization

Abstract

All Science Journal Classification (ASJC) codes

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