A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al.  and the temperature dependence of transconductance dispersion observed by Blight et al. .
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering