A Transconductance Spectroscopy Approach to Device Level Surface State Characterization

Jian H. Zhao, Robert Hwang, Steve Chang

Research output: Contribution to journalArticle

4 Scopus citations


A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by Ozeki et al. [1] and the temperature dependence of transconductance dispersion observed by Blight et al. [3].

Original languageEnglish (US)
Pages (from-to)1172-1174
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - Jun 1993


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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