A vertical SiC JFET with a monolithically integrated JBS diode

K. Sheng; R. Radhakrishnan; Y. Zhang; J. H. Zhao

doi:10.1109/ISPSD.2009.5158050

A vertical SiC JFET with a monolithically integrated JBS diode

K. Sheng, R. Radhakrishnan, Y. Zhang, J. H. Zhao

School of Engineering, Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.

Original language	English (US)
Title of host publication	ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's
Pages	255-258
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2009.5158050
State	Published - 2009
Event	21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09 - Barcelona, Spain Duration: Jun 14 2009 → Jun 18 2009

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Other

Other	21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09
Country/Territory	Spain
City	Barcelona
Period	6/14/09 → 6/18/09

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/ISPSD.2009.5158050

Cite this

Sheng, K., Radhakrishnan, R., Zhang, Y., & Zhao, J. H. (2009). A vertical SiC JFET with a monolithically integrated JBS diode. In ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's (pp. 255-258). [5158050] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2009.5158050

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title = "A vertical SiC JFET with a monolithically integrated JBS diode",

abstract = "It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.",

author = "K. Sheng and R. Radhakrishnan and Y. Zhang and Zhao, {J. H.}",

year = "2009",

doi = "10.1109/ISPSD.2009.5158050",

language = "English (US)",

isbn = "9781424446735",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

pages = "255--258",

booktitle = "ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's",

note = "21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09 ; Conference date: 14-06-2009 Through 18-06-2009",

}

Sheng, K, Radhakrishnan, R, Zhang, Y & Zhao, JH 2009, A vertical SiC JFET with a monolithically integrated JBS diode. in ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's., 5158050, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 255-258, 21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09, Barcelona, Spain, 6/14/09. https://doi.org/10.1109/ISPSD.2009.5158050

A vertical SiC JFET with a monolithically integrated JBS diode. / Sheng, K.; Radhakrishnan, R.; Zhang, Y. et al.

ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's. 2009. p. 255-258 5158050 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A vertical SiC JFET with a monolithically integrated JBS diode

AU - Sheng, K.

AU - Radhakrishnan, R.

AU - Zhang, Y.

AU - Zhao, J. H.

PY - 2009

Y1 - 2009

N2 - It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.

AB - It is desirable for many power applications to integrate a power switch and its reverse-parallel diode onto the same chip/package to reduce component count and improve circuit reliability and integrity. In this paper, a SiC vertical JFET with a monolithically integrated JBS diode is proposed, fabricated and characterized. The integrated switch uses a process similar to that of a traditional SiC vertical JFET. The experimental results show that, in the reverse direction, the integrated switch, can conduct current by utilizing both the integrated diode and the JFET channel. This can be utilized to significantly reduce the device conduction loss in power electronic applications.

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M3 - Conference contribution

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SN - 9781424446735

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 255

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BT - ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's

T2 - 21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09

Y2 - 14 June 2009 through 18 June 2009

ER -

A vertical SiC JFET with a monolithically integrated JBS diode

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