Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3

Ilan T. Rosen, Indra Yudhistira, Girish Sharma, Maryam Salehi, M. A. Kastner, Seongshik Oh, Shaffique Adam, David Goldhaber-Gordon

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Abstract

We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.

Original languageEnglish (US)
Article number201101
JournalPhysical Review B
Volume99
Issue number20
DOIs
StatePublished - May 2 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Rosen, I. T., Yudhistira, I., Sharma, G., Salehi, M., Kastner, M. A., Oh, S., Adam, S., & Goldhaber-Gordon, D. (2019). Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. Physical Review B, 99(20), [201101]. https://doi.org/10.1103/PhysRevB.99.201101