Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3

Ilan T. Rosen, Indra Yudhistira, Girish Sharma, Maryam Salehi, M. A. Kastner, Seongshik Oh, Shaffique Adam, David Goldhaber-Gordon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.

Original languageEnglish (US)
Article number201101
JournalPhysical Review B
Volume99
Issue number20
DOIs
StatePublished - May 2 2019

Fingerprint

low conductivity
Surface states
disorders
electrons
Electrons
tuning
insulators
impurities
conductivity
Temperature
Carrier concentration
temperature
thin films
Tuning
scattering
Scattering
Impurities
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Rosen, I. T., Yudhistira, I., Sharma, G., Salehi, M., Kastner, M. A., Oh, S., ... Goldhaber-Gordon, D. (2019). Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. Physical Review B, 99(20), [201101]. https://doi.org/10.1103/PhysRevB.99.201101
Rosen, Ilan T. ; Yudhistira, Indra ; Sharma, Girish ; Salehi, Maryam ; Kastner, M. A. ; Oh, Seongshik ; Adam, Shaffique ; Goldhaber-Gordon, David. / Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. In: Physical Review B. 2019 ; Vol. 99, No. 20.
@article{0b905bfe81534b62919e5be7b0f8b80a,
title = "Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3",
abstract = "We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.",
author = "Rosen, {Ilan T.} and Indra Yudhistira and Girish Sharma and Maryam Salehi and Kastner, {M. A.} and Seongshik Oh and Shaffique Adam and David Goldhaber-Gordon",
year = "2019",
month = "5",
day = "2",
doi = "10.1103/PhysRevB.99.201101",
language = "English (US)",
volume = "99",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "20",

}

Rosen, IT, Yudhistira, I, Sharma, G, Salehi, M, Kastner, MA, Oh, S, Adam, S & Goldhaber-Gordon, D 2019, 'Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3', Physical Review B, vol. 99, no. 20, 201101. https://doi.org/10.1103/PhysRevB.99.201101

Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3. / Rosen, Ilan T.; Yudhistira, Indra; Sharma, Girish; Salehi, Maryam; Kastner, M. A.; Oh, Seongshik; Adam, Shaffique; Goldhaber-Gordon, David.

In: Physical Review B, Vol. 99, No. 20, 201101, 02.05.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Absence of strong localization at low conductivity in the topological surface state of low-disorder Sb2Te3

AU - Rosen, Ilan T.

AU - Yudhistira, Indra

AU - Sharma, Girish

AU - Salehi, Maryam

AU - Kastner, M. A.

AU - Oh, Seongshik

AU - Adam, Shaffique

AU - Goldhaber-Gordon, David

PY - 2019/5/2

Y1 - 2019/5/2

N2 - We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.

AB - We present low-temperature transport measurements of a gate-tunable thin-film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below e2/h, where two-dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states.

UR - http://www.scopus.com/inward/record.url?scp=85065482751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065482751&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.99.201101

DO - 10.1103/PhysRevB.99.201101

M3 - Article

VL - 99

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 20

M1 - 201101

ER -