Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry