Activation of Be-Implanted GaAs by Using RTA with Proximity Contact

Yicheng Lu; C. A. Paz de Araujo; T. S. Kalkur

doi:10.1149/1.2086828

Activation of Be-Implanted GaAs by Using RTA with Proximity Contact

Yicheng Lu, C. A. Paz de Araujo, T. S. Kalkur

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.

Original language	English (US)
Pages (from-to)	1904-1907
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	6
DOIs	https://doi.org/10.1149/1.2086828
State	Published - Jun 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2086828

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title = "Activation of Be-Implanted GaAs by Using RTA with Proximity Contact",

abstract = "Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.",

author = "Yicheng Lu and {Paz de Araujo}, {C. A.} and Kalkur, {T. S.}",

year = "1990",

month = jun,

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AU - Lu, Yicheng

AU - Paz de Araujo, C. A.

AU - Kalkur, T. S.

PY - 1990/6

Y1 - 1990/6

N2 - Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.

AB - Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.

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JF - Journal of the Electrochemical Society

IS - 6

ER -

Activation of Be-Implanted GaAs by Using RTA with Proximity Contact

Abstract

All Science Journal Classification (ASJC) codes

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