Activation of Be-Implanted GaAs by Using RTA with Proximity Contact

Yicheng Lu, C. A. Paz de Araujo, T. S. Kalkur

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation.

Original languageEnglish (US)
Pages (from-to)1904-1907
Number of pages4
JournalJournal of the Electrochemical Society
Volume137
Issue number6
DOIs
StatePublished - Jun 1990
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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