TY - GEN
T1 - Active MMIC Transversal Filter-Based Negative Group Delay/Non-Foster Circuit in 0.1-μm GaAs pHEMT Technology
AU - Zhu, Minning
AU - Chen, Austin Ying Kuang
AU - Hsiao, Chiao Yun
AU - Kuo, Chien Nan
AU - Wu, Chung Tse Michael
N1 - Funding Information:
ACKNOWLEDGMENT This work is sponsored by the Defense Advanced Research Projects Agency under Grant D19AP00030. Any opinions, findings, and conclusions, or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the position or the policy of the Government.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/7
Y1 - 2021/6/7
N2 - A new kind of negative group delay (NGD)/non-Foster circuit using monolithic microwave integrated circuit (MMIC) technology is presented. The proposed design is based on an active transversal filter topology using a distributed amplifier (DA) with a cascode configuration at each stage of gain cells, realized by using WIN's 0.1-um GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Furthermore, a forward-biased Schottky barrier diode (SBD) is utilized as a phase shifter to adjust the absolute phase of S21. By properly applying the gate bias voltage and controlling the phase shifter, the proposed NGD circuit can synthesize a negative capacitance of-0.3 pF with a bandwidth of 500 MHz at around 5 GHz while ensuring unconditional stability. The fabricated MMIC NGD/non-Foster circuit has a footprint of 3. 05×3. 15mm2 with a power consumption of 125 mW. Measurement and simulation results show great agreement with each other.
AB - A new kind of negative group delay (NGD)/non-Foster circuit using monolithic microwave integrated circuit (MMIC) technology is presented. The proposed design is based on an active transversal filter topology using a distributed amplifier (DA) with a cascode configuration at each stage of gain cells, realized by using WIN's 0.1-um GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Furthermore, a forward-biased Schottky barrier diode (SBD) is utilized as a phase shifter to adjust the absolute phase of S21. By properly applying the gate bias voltage and controlling the phase shifter, the proposed NGD circuit can synthesize a negative capacitance of-0.3 pF with a bandwidth of 500 MHz at around 5 GHz while ensuring unconditional stability. The fabricated MMIC NGD/non-Foster circuit has a footprint of 3. 05×3. 15mm2 with a power consumption of 125 mW. Measurement and simulation results show great agreement with each other.
KW - GaAs MMIC
KW - distributed amplifier (DA)
KW - negative capacitance
KW - negative group delay (NGD)
KW - non-Foster element
UR - http://www.scopus.com/inward/record.url?scp=85118539736&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85118539736&partnerID=8YFLogxK
U2 - 10.1109/IMS19712.2021.9574804
DO - 10.1109/IMS19712.2021.9574804
M3 - Conference contribution
AN - SCOPUS:85118539736
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 681
EP - 684
BT - 2021 IEEE MTT-S International Microwave Symposium, IMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE MTT-S International Microwave Symposium, IMS 2021
Y2 - 7 June 2021 through 25 June 2021
ER -