@article{c1815c2bf53048a09762adcdfdf4e3be,
title = "Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density",
abstract = "Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiNx through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe2 n-MOSFETs with a mobility of ∼70 cm2/V s.",
author = "Kevin Chen and Daisuke Kiriya and Mark Hettick and Mahmut Tosun and Ha, {Tae Jun} and Madhvapathy, {Surabhi Rao} and Sujay Desai and Angada Sachid and Ali Javey",
note = "Funding Information: Deposition of SiNx was funded by the NSF NASCENT Center. Other material processing and characterization was funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division, U.S. Department of Energy, under Contract No. DE-AC02-05CH11231. Device fabrication was funded by the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA. Publisher Copyright: {\textcopyright} 2014 Author(s).",
year = "2014",
month = sep,
day = "1",
doi = "10.1063/1.4891824",
language = "English (US)",
volume = "2",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "9",
}