An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator

Jonathan P. Comeau; Laleh Najafizadeh; Joel M. Andrews; A. P. Gnana Prakash; John D. Cressler

doi:10.1109/LMWC.2007.895703

An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator

Jonathan P. Comeau, Laleh Najafizadeh, Joel M. Andrews, A. P. Gnana Prakash, John D. Cressler

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33 dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies.

Original language	English (US)
Pages (from-to)	349-351
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2007.895703
State	Published - May 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Heterojunction bipolar transistor (HBT)
Power amplifier (PA)
Voltage-controlled oscillator (VCO)

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10.1109/LMWC.2007.895703

Cite this

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title = "An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator",

abstract = "This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33 dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies.",

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AU - Comeau, Jonathan P.

AU - Najafizadeh, Laleh

AU - Andrews, Joel M.

AU - Gnana Prakash, A. P.

AU - Cressler, John D.

PY - 2007/5

Y1 - 2007/5

N2 - This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33 dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies.

AB - This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33 dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies.

KW - Heterojunction bipolar transistor (HBT)

KW - Power amplifier (PA)

KW - Voltage-controlled oscillator (VCO)

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An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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