An i-v measurement method and its application for characterizing ferroelectric pzt thin films

S. C. Lee, K. F. Galloway, Dunbar Birnie, D. R. Uhlmann

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

Original languageEnglish (US)
Pages (from-to)31-43
Number of pages13
JournalIntegrated Ferroelectrics
Volume4
Issue number1
DOIs
StatePublished - Jan 1 1994

Fingerprint

Ferroelectric thin films
Leakage currents
thin films
Fatigue of materials
Polarization
leakage
Sol-gels
polarization
Thin films
gels
decay

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • fatigue
  • ferroekctric
  • static I-V measurement

Cite this

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An i-v measurement method and its application for characterizing ferroelectric pzt thin films. / Lee, S. C.; Galloway, K. F.; Birnie, Dunbar; Uhlmann, D. R.

In: Integrated Ferroelectrics, Vol. 4, No. 1, 01.01.1994, p. 31-43.

Research output: Contribution to journalArticle

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