An i-v measurement method and its application for characterizing ferroelectric pzt thin films

S. C. Lee, K. F. Galloway, D. P. Birnie, D. R. Uhlmann

Research output: Contribution to journalArticle

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Abstract

A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

Original languageEnglish (US)
Pages (from-to)31-43
Number of pages13
JournalIntegrated Ferroelectrics
Volume4
Issue number1
DOIs
StatePublished - Feb 1994

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • fatigue
  • ferroekctric
  • static I-V measurement

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