An InP-Based Optothyristor for Pulsed Power-Switching Applications

Jian H. Zhao, Robert Lis, Juan Illan, Sigrid McAfee, Debbie Coblentz, Terry Burke, Walter Buchwald, Maurice Weiner, Kenneth A. Jones

Research output: Contribution to journalArticle

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A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.

Original languageEnglish (US)
Pages (from-to)140-142
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - Mar 1993


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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