A high-power InP-based optothyristor has been fabricated and tested for pulsed power switching. To increase the power handling capability, the device has a 250-μm-thick Fe-doped semi-insulating (SI) InP sandwiched between two p-n junctions grown by MOCVD. The device turn-on is controlled by optical illumination on the Sl-InP, which creates a high concentration of electron and hole pairs. The switched current and the di/dt rating have been studied as a function of the switch blocking voltage. It is shown that the optothyristor is capable of switching a current almost four times the current switched by a bulk Sl-InP photoconductive switch under the same voltage bias.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering