Annular grain structures in pulsed laser recrystallized Si on amorphous insulators

G. K. Celler; H. J. Leamy; L. E. Trimble; T. T. Sheng

doi:10.1063/1.92760

Annular grain structures in pulsed laser recrystallized Si on amorphous insulators

G. K. Celler, H. J. Leamy, L. E. Trimble, T. T. Sheng

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Polycrystalline silicon films on SiO₂ and Si₃N ₄ may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.

Original language	English (US)
Pages (from-to)	425-427
Number of pages	3
Journal	Applied Physics Letters
Volume	39
Issue number	5
DOIs	https://doi.org/10.1063/1.92760
State	Published - 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.92760

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@article{b7df1ae2f2614c1d89fbd9c68026c31a,

title = "Annular grain structures in pulsed laser recrystallized Si on amorphous insulators",

abstract = "Polycrystalline silicon films on SiO2 and Si3N 4 may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.",

author = "Celler, {G. K.} and Leamy, {H. J.} and Trimble, {L. E.} and Sheng, {T. T.}",

year = "1981",

doi = "10.1063/1.92760",

language = "English (US)",

volume = "39",

pages = "425--427",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Annular grain structures in pulsed laser recrystallized Si on amorphous insulators

AU - Celler, G. K.

AU - Leamy, H. J.

AU - Trimble, L. E.

AU - Sheng, T. T.

PY - 1981

Y1 - 1981

N2 - Polycrystalline silicon films on SiO2 and Si3N 4 may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.

AB - Polycrystalline silicon films on SiO2 and Si3N 4 may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.

UR - http://www.scopus.com/inward/record.url?scp=0040344485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040344485&partnerID=8YFLogxK

U2 - 10.1063/1.92760

DO - 10.1063/1.92760

M3 - Article

AN - SCOPUS:0040344485

VL - 39

SP - 425

EP - 427

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Annular grain structures in pulsed laser recrystallized Si on amorphous insulators

Abstract

All Science Journal Classification (ASJC) codes

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