Abstract
Polycrystalline silicon films on SiO2 and Si3N 4 may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.
Original language | English (US) |
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Pages (from-to) | 425-427 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 39 |
Issue number | 5 |
DOIs | |
State | Published - 1981 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)