Annular grain structures in pulsed laser recrystallized Si on amorphous insulators

G. K. Celler, H. J. Leamy, L. E. Trimble, T. T. Sheng

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Polycrystalline silicon films on SiO2 and Si3N 4 may be processed by tightly focused, overlapping laser pulses to yield large-grained (1-5μm) material. In individual nonoverlapping spots the large grains are arranged in concentric rings whose origin is clarified in this letter.

Original languageEnglish (US)
Pages (from-to)425-427
Number of pages3
JournalApplied Physics Letters
Volume39
Issue number5
DOIs
StatePublished - 1981
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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