Antiferromagnetic semiconductor Eu3Sn2P4 with Sn-Sn dimer and crown-wrapped Eu

Joanna Blawat, Przemyslaw Swatek, Xin Gui, Rongying Jin, Weiwei Xie

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A novel antiferromagnetic semiconductor, Eu3Sn2P4, has been discovered. Single crystals of Eu3Sn2P4 were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu3Sn2P4 crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP216). Six Sn-Sn dimers connected by P atoms form a Sn12P24 crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a TN ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < TN. The effective magnetic moment is 7.41(3) μB per Eu, corresponding to Eu2+. The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below TN, the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.

Original languageEnglish (US)
Pages (from-to)12650-12656
Number of pages7
JournalJournal of Materials Chemistry C
Volume7
Issue number40
DOIs
StatePublished - 2019
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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