Application of electron and ion beam analysis techniques to microelectronics

T. S. Kuan, P. E. Batson, R. M. Feenstra, A. J. Slavin, R. M. Tromp

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The application of electron microscopy, scanning tunneling microscopy, and medium-energy ion scattering to microelectronics is reviewed. These analysis techniques are playing an important role in advancing the technology. Their use in the study of relevant phenomena regarding surfaces, interfaces, and defects is discussed. Recent developments and applications are illustrated using results obtained at the IBM Thomas J. Watson Research Center. Potential advances in the techniques are also discussed.

Original languageEnglish (US)
Pages (from-to)183-207
Number of pages25
JournalIBM Journal of Research and Development
Volume36
Issue number2
DOIs
StatePublished - Jan 1 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Computer Science(all)

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