Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

V. M. Pudalov, Michael Gershenson, H. Kojima, G. Brunthaler, G. Bauer

Research output: Contribution to journalArticle

Abstract

We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e2 is still lacking.

Original languageEnglish (US)
Pages (from-to)47-53
Number of pages7
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number1
StatePublished - May 17 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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