We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e2 is still lacking.
|Original language||English (US)|
|Number of pages||7|
|Journal||Physica Status Solidi C: Conferences|
|State||Published - May 17 2004|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics