Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

V. M. Pudalov, Michael Gershenson, H. Kojima, G. Brunthaler, G. Bauer

Research output: Contribution to journalArticle

Abstract

We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e2 is still lacking.

Original languageEnglish (US)
Pages (from-to)47-53
Number of pages7
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number1
StatePublished - May 17 2004

Fingerprint

temperature distribution
field effect transistors
conductivity
magnetic fields
ballistics
magnetic moments
signatures
interactions
disorders
electrical resistivity
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{3ea4c20587f943d4a981396856127ef6,
title = "Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?",
abstract = "We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the {"}metallic{"} state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the {"}critical{"} regime of ρ ∼ h/e2 is still lacking.",
author = "Pudalov, {V. M.} and Michael Gershenson and H. Kojima and G. Brunthaler and G. Bauer",
year = "2004",
month = "5",
day = "17",
language = "English (US)",
volume = "1",
pages = "47--53",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "1",

}

Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs? / Pudalov, V. M.; Gershenson, Michael; Kojima, H.; Brunthaler, G.; Bauer, G.

In: Physica Status Solidi C: Conferences, Vol. 1, No. 1, 17.05.2004, p. 47-53.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

AU - Pudalov, V. M.

AU - Gershenson, Michael

AU - Kojima, H.

AU - Brunthaler, G.

AU - Bauer, G.

PY - 2004/5/17

Y1 - 2004/5/17

N2 - We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e2 is still lacking.

AB - We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T,B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ> e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e2 is still lacking.

UR - http://www.scopus.com/inward/record.url?scp=2342531054&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342531054&partnerID=8YFLogxK

M3 - Article

VL - 1

SP - 47

EP - 53

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 1

ER -