Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

We compare the temperature and in-plane magnetic field dependences of resistivity ρ(T, B_∥) of Si MOSEETs with the recent theories. In the comparison we use the effective mass m* and g*-factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the "metallic" state, for high conductivities (σ > e²/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B _∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the "critical" regime of ρ ∼ h/e² is still lacking.