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Atomic and electronic structure of a dissociated 60° misfit dislocation in Ge
x
Si(
1-x
)
P. E. Batson
Research output
:
Contribution to journal
›
Article
›
peer-review
54
Scopus citations
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Dive into the research topics of 'Atomic and electronic structure of a dissociated 60° misfit dislocation in Ge
x
Si(
1-x
)'. Together they form a unique fingerprint.
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Keyphrases
Atomic Structure
100%
Electronic Structure
100%
Dislocation
100%
Misfit Dislocation
100%
Electronic Energy Loss
100%
Electronic States
50%
Core Structure
50%
Quantum Well
50%
Conduction Band Minimum
50%
Substrate Interface
50%
Stacking Faults
50%
Extended Core
50%
Double Period
50%
Neighborhood Interaction
50%
Strained Si
50%
In-gap States
50%
Period Pairing
50%
Gap Defect
50%
Physics
Atomic Structure
100%
Electron Energy
100%
Energy Levels
100%
Quantum Wells
50%
Conduction Band
50%
Core Structure
50%
Crystal Defect
50%
Material Science
Dislocation (Crystal)
100%
Energy Levels
100%
Silicon
50%
Quantum Well
50%
Crystal Defect
50%