Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond

V. Narayanan, V. K. Paruchuri, N. A. Bojarczuk, B. P. Linder, B. Doris, Y. H. Kim, S. Zafar, J. Statins, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J. P. Locquet, D. L. Lacey, Y. Wang, P. E. Batson, P. RonsheimR. Jammy, M. P. Chudzik, M. Ieong, S. Guha, G. Shahidi, T. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

89 Scopus citations

Abstract

We have fabricated electrically reliable band-edge (BE) high-κ/Metal nMOSFETs stable to 1000°C, that exhibit the highest mobility (203 cm 2/Vs @ 1MV/cm) at the thinnest Tinv (1.4 nm) reported to date. These stacks are formed by capping HfO2 with ultra-thin layers containing strongly electropositive gp. IIA and IIIB elements (e.g. Mg and La), prior to deposition of the TiN/Poly-Si electrode stack [1, 2], in a conventional gate-first flow. Increasing the cap thickness tunes the Vt/V fb, from a midgap position to BE while maintaining high mobility & good PBTI. The addition of La can enhance the effective κ value of the dielectric stack, resulting in EOTs < 1nm. Short channel devices with band edge characteristics are demonstrated down to 60 nm. Finally, possible mechanisms to explain the nFET Vt shift are discussed.

Original languageEnglish (US)
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages178-179
Number of pages2
StatePublished - 2006
Externally publishedYes
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: Jun 13 2006Jun 15 2006

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period6/13/066/15/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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