Band offsets of a ruthenium gate on ultrathin high- κ oxide films on silicon

Engineering & Materials Science

• Ruthenium 95%
• Oxide films 78%
• Oxides 54%
• Silicon 49%
• Valence bands 37%
• Conduction bands 35%
• Electron affinity 20%
• Photoemission 18%
• Core levels 16%
• Synchrotron radiation 15%
• Metallizing 12%
• Energy gap 11%
• Thin films 9%
• X rays 9%
• Metals 6%

Physics & Astronomy

• ruthenium 77%
• oxide films 56%
• oxides 39%
• silicon 33%
• conduction bands 18%
• valence 15%
• shift 12%
• electron affinity 12%
• synchrotron radiation 9%
• photoelectric emission 9%
• dipoles 7%
• thin films 5%
• metals 5%
• x rays 4%

Chemical Compounds

• Band Offset 100%
• Oxide 34%
• Liquid Film 30%
• Valence Band 27%
• Conduction Band 27%
• Inverse Photoemission 22%
• Core Level 15%
• Work Function 14%
• Dipole 12%
• Band Gap 9%
• Metal 5%