Boron pileup and clustering in silicon-on-insulator films

H. H. Vuong, H. J. Gossmann, L. Pelaz, G. K. Celler, D. C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V. C. Venezia, C. S. Rafferty, S. J. Hillenius, J. McKinley, F. A. Stevie, C. Granger

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The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting (a) boron pileup at both upper and lower interfaces of the Si film, and (b) no reduction of the boron clustering in SOI compared with bulk silicon.

Original languageEnglish (US)
Pages (from-to)1083-1085
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 23 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Vuong, H. H., Gossmann, H. J., Pelaz, L., Celler, G. K., Jacobson, D. C., Barr, D., Hergenrother, J., Monroe, D., Venezia, V. C., Rafferty, C. S., Hillenius, S. J., McKinley, J., Stevie, F. A., & Granger, C. (1999). Boron pileup and clustering in silicon-on-insulator films. Applied Physics Letters, 75(8), 1083-1085.