Abstract
We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 207-211 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 6 |
| Issue number | 2-4 |
| State | Published - Mar 1 1997 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
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Boronated tetrahedral amorphous carbon (ta-C:B). / Chhowalla, Manishkumar; Yin, Y.; Amaratunga, G. A J; McKenzie, D. R.; Frauenheim, Th.
In: Diamond and Related Materials, Vol. 6, No. 2-4, 01.03.1997, p. 207-211.Research output: Contribution to journal › Article
TY - JOUR
T1 - Boronated tetrahedral amorphous carbon (ta-C:B)
AU - Chhowalla, Manishkumar
AU - Yin, Y.
AU - Amaratunga, G. A J
AU - McKenzie, D. R.
AU - Frauenheim, Th
PY - 1997/3/1
Y1 - 1997/3/1
N2 - We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).
AB - We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).
UR - http://www.scopus.com/inward/record.url?scp=0001959767&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001959767&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0001959767
VL - 6
SP - 207
EP - 211
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 2-4
ER -