Boronated tetrahedral amorphous carbon (ta-C:B)

Manishkumar Chhowalla, Y. Yin, G. A J Amaratunga, D. R. McKenzie, Th Frauenheim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).

Original languageEnglish (US)
Pages (from-to)207-211
Number of pages5
JournalDiamond and Related Materials
Volume6
Issue number2-4
StatePublished - Mar 1 1997

Fingerprint

Amorphous carbon
carbon
Carbon films
Amorphous films
Ions
Defect density
Optical band gaps
Bond length
Distribution functions
Paramagnetic resonance
electrical resistivity
Hardness
Vacuum
radial distribution
electron paramagnetic resonance
ions
hardness
arcs
distribution functions
vacuum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Chhowalla, M., Yin, Y., Amaratunga, G. A. J., McKenzie, D. R., & Frauenheim, T. (1997). Boronated tetrahedral amorphous carbon (ta-C:B). Diamond and Related Materials, 6(2-4), 207-211.
Chhowalla, Manishkumar ; Yin, Y. ; Amaratunga, G. A J ; McKenzie, D. R. ; Frauenheim, Th. / Boronated tetrahedral amorphous carbon (ta-C:B). In: Diamond and Related Materials. 1997 ; Vol. 6, No. 2-4. pp. 207-211.
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Chhowalla, M, Yin, Y, Amaratunga, GAJ, McKenzie, DR & Frauenheim, T 1997, 'Boronated tetrahedral amorphous carbon (ta-C:B)', Diamond and Related Materials, vol. 6, no. 2-4, pp. 207-211.

Boronated tetrahedral amorphous carbon (ta-C:B). / Chhowalla, Manishkumar; Yin, Y.; Amaratunga, G. A J; McKenzie, D. R.; Frauenheim, Th.

In: Diamond and Related Materials, Vol. 6, No. 2-4, 01.03.1997, p. 207-211.

Research output: Contribution to journalArticle

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AU - Chhowalla, Manishkumar

AU - Yin, Y.

AU - Amaratunga, G. A J

AU - McKenzie, D. R.

AU - Frauenheim, Th

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N2 - We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).

AB - We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).

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Chhowalla M, Yin Y, Amaratunga GAJ, McKenzie DR, Frauenheim T. Boronated tetrahedral amorphous carbon (ta-C:B). Diamond and Related Materials. 1997 Mar 1;6(2-4):207-211.